| PART |
Description |
Maker |
| BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| UPA602T PA602T G11249EJ1V0DS00 UPA602T-A |
100 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FET 6-PIN 2 CIRCUITS
MOS Field Effect Transistor
From old datasheet system
|
NEC Corp.
|
| 2SK3029 2SK3022 2SK3029TENTATIVE PANASONICCORPORAT |
Silicon N-Channel Power F-MOS FET 5000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| APT5010JVR |
POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
|
Advanced Power Technolo...
Advanced Power Technology, Ltd.
|
| APT1001R1HVR |
POWER MOS V 1000V 9A 1.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT1001R1AVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
POWER MOS V 1000V 9A 1.100 Ohm
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| APT5010JVFR |
POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| PHP206 |
Dual P-channel enhancement mode MOS transistor 5600 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| RJK0701DPN-E0-15 RJK0701DPN-E0-T2 |
N-Channel MOS FET 75 V, 100 A, 3.8 m?
|
Renesas Electronics Corporation
|
| BF964 BF964S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
Vishay Siliconix
|
| BF1205C |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
